ON Semiconductor NGTG35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247 [NGTG35N65FL2WG]; 900-8817
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 70 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 300 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Length | 16.26mm |
| Width | 5.3mm |
| Height | 21.08mm |
| Dimensions | 16.26 x 5.3 x 21.08mm |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 3115pF |
| Maximum Operating Temperature | +175 °C |