NTJD1155LT1G Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 ON Semiconductor [NTJD1155LT1G]; 163-1114
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.3 A |
| Maximum Drain Source Voltage | 8 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 320 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 400 mW |
| Transistor Configuration | N+P Loadswitch |
| Maximum Gate Source Voltage | +8 V |
| Number of Elements per Chip | 2 |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 2.2mm |
| Width | 1.35mm |