NTJD4158CT1G Dual N/P-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 ON Semiconductor [NTJD4158CT1G]; 163-1118
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 250 mA, 880 mA |
| Maximum Drain Source Voltage | 20 V, 30 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 2.5 Ω, 500 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 270 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, -12 V, +12 V, +20 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Width | 1.35mm |
| Length | 2.2mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1mm |
| Typical Gate Charge @ Vgs | 0.9 nC @ 5 V, 2.2 nC @ 4.5 V |
| Transistor Material | Si |