NTLJD3119CTBG Dual N/P-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN ON Semiconductor [NTLJD3119CTBG]; 121-6306
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.1 A, 4.6 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | WDFN |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 120 mΩ, 200 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.3 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Width | 2mm |
| Minimum Operating Temperature | -55 °C |
| Length | 2mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Height | 0.75mm |