ON Semiconductor NUF2114MNT1G, Quad Bi-Directional ESD Protection Diode, 0.36W, 8-Pin DFN8 [NUF2114MNT1G]; 805-1918
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Direction Type | Bi-Directional |
| Diode Configuration | Array |
| Minimum Breakdown Voltage | 13.7V |
| Mounting Type | Surface Mount |
| Package Type | DFN8 |
| Maximum Reverse Stand-off Voltage | 12V |
| Pin Count | 8 |
| Peak Pulse Power Dissipation | 0.36W |
| ESD Protection | Yes |
| Number of Elements per Chip | 4 |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +85 °C |
| Capacitance | 66pF |
| Length | 2mm |
| Test Current | 1mA |
| Dimensions | 2 x 2 x 0.95mm |
| Maximum Reverse Leakage Current | 100nA |
| Width | 2mm |
| Height | 0.95mm |