NVMFD6H852NLWFT1G [NVMFD6H852NLWFT1G]; 195-2556
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 31.5 mO |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 3.2 W |
| Transistor Configuration | Dual |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Height | 1.05mm |
| Width | 5.1mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 10 @ 10 V nC |
| Forward Diode Voltage | 1.2V |
| Automotive Standard | AEC-Q101 |
| Maximum Operating Temperature | +175 °C |
| Length | 6.1mm |