NVMFS6H818NWFT1G N-Channel MOSFET, 123 A, 80 V NVMFS6H818N, 5-Pin DFN ON Semiconductor [NVMFS6H818NWFT1G]; 172-3349
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 123 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Automotive Standard | AEC-Q101 |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Height | 1.05mm |
| Series | NVMFS6H818N |
| Width | 5.1mm |
| Forward Diode Voltage | 1.2V |
| Length | 6.1mm |