SI4435DY P-Channel MOSFET, 8.8 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor [SI4435DY]; 166-3246
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 35 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 3.9mm |
| Forward Diode Voltage | 1.2V |
| Series | PowerTrench |
| Height | 1.57mm |
| Typical Gate Charge @ Vgs | 17 nC @ 5 V |
| Length | 4.9mm |
| Maximum Operating Temperature | +175 °C |