ONSEMI Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V [CNY173SM]
The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package. High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) Applications AC-DC Merchant Power Supply Consumer Appliances Industrial Motor
The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
Applications
AC-DC Merchant Power Supply
Consumer Appliances
Industrial Motor