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ONSEMIFDC6312PTransistor: P-MOSFET x2

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 2.3AMaximum Power Dissipation 960 mW
Mã nhà sản xuất
FDC6312P
Thương hiệu
Mã kho
671-0340
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDC6312P
Channel Type P
Maximum Continuous Drain Current 2.3A
Maximum Drain Source Voltage 20V
Series PowerTrench
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 115mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 960 mW
Transistor Configuration Isolated
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 2
Transistor Material Si
Width 1.7mm
Typical Gate Charge @ Vgs 4.4 nC @ 4.5 V
Length 3mm
Maximum Operating Temperature +150°C
Height 1mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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