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ONSEMI Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6 [FDC642P]

Mã nhà sản xuất
FDC642P
Thương hiệu
Mã kho
166-3705
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Automotive P-Channel MOSFET, Fairchild Semiconductor Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Automotive P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDC642P
Channel Type P
Maximum Continuous Drain Current 4A
Maximum Drain Source Voltage 20V
Series PowerTrench
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 100mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 1.6W
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Width 1.7mm
Length 3mm
Typical Gate Charge @ Vgs 11 nC @ 4.5 V
Transistor Material Si
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 1mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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