ONSEMI Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8 [FDMS86181]
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI This product is general usage and suitable for many different applications.
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.