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ONSEMI Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W [FDMS86263P]

Mã nhà sản xuất
FDMS86263P
Thương hiệu
Mã kho
124-1442
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDMS86263P
Channel Type P
Maximum Continuous Drain Current 22A
Maximum Drain Source Voltage 150V
Package Type PQFN8
Series PowerTrench
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 94mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 104W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 45 nC @ 10 V
Width 5.85mm
Transistor Material Si
Length 5mm
Maximum Operating Temperature +150°C
Height 1.05mm
Minimum Operating Temperature -55°C

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