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ONSEMI Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3 [FDN337N]

Mã nhà sản xuất
FDN337N
Thương hiệu
Mã kho
671-0429
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDN337N
Channel Type N
Maximum Continuous Drain Current 2.2A
Maximum Drain Source Voltage 30V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 65mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 7 nC @ 4.5 V
Length 2.92mm
Number of Elements per Chip 1
Transistor Material Si
Width 1.4mm
Minimum Operating Temperature -55°C
Height 0.94mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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