ONSEMI Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; D2PAK [NVB072N65S3]
SUPERFET III MOSFET is ON Semiconductor's brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. 700 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 78 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) PPAP Capable Typ. RDS(on) = 63 mΩ Higher system reliability at low temperature operation Lower switching loss PPAP Capable Applications HV DC/DC converter End Products On Board Charger DC/DC Converter
SUPERFET III MOSFET is ON Semiconductor's brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter