OSI Optoelectronics, OSD60-0 IR Si Photodiode, Through Hole TO-8 [OSD60-0]; 183-7122
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Spectrums Detected | Infrared |
| Wavelength of Peak Sensitivity | 900nm |
| Package Type | TO-8 |
| Mounting Type | Through Hole |
| Number of Pins | 3 |
| Diode Material | Si |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1100nm |
| Height | 0.17in |
| Diameter | 13.97mm |
| Peak Photo Sensitivity | 0.54A/W |
| Series | OSD |
| Polarity | Reverse |
| Typical Rise Time | 14ns |