2SJ601-AZ P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK Renesas [2SJ601-AZ]; 772-5258
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 46 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 65 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Length | 6.5mm |
| Height | 2.3mm |
| Width | 7mm |
| Transistor Material | Si |