BSM180D12P3C007 Dual SiC N-Channel SiC Power Module, 180 A, 1200 V BSM, 4-Pin C ROHM [BSM180D12P3C007]; 144-2259
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | C |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.6V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 880 W |
| Number of Elements per Chip | 2 |
| Series | BSM |
| Maximum Operating Temperature | +150 °C |
| Length | 122mm |
| Minimum Operating Temperature | -40 °C |
| Width | 45.6mm |
| Height | 17mm |
| Transistor Material | SiC |