Standard Bipolar Transistors [EMZ8T2R]; 183-4966
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum DC Collector Current | 150 (NPN) mA, 500 (PNP) mA |
| Maximum Collector Emitter Voltage | -12 (PNP) V, 50 (NPN) V |
| Package Type | EMT6 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 150 mW |
| Minimum DC Current Gain | 120, 270 |
| Maximum Collector Base Voltage | -15 (PNP) V, 60 (NPN) V |
| Maximum Emitter Base Voltage | -6 (PNP) V, 7 (NPN) V |
| Maximum Operating Frequency | 100 MHz |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Length | 1.6mm |
| Dimensions | 1.6 x 1.2 x 0.5mm |
| Maximum Collector Emitter Saturation Voltage | 0.4 V |
| Width | 1.2mm |
| Height | 0.5mm |
| Maximum Operating Temperature | +150 °C |