HP8M31TB1 Dual N/P-Channel MOSFET, 8.5 (N Channel) A, 8.5 (P Channel) A, 60 (N Channel) V, 60 (P Channel) V HP8M31, [HP8M31TB1]; 178-5713
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 8.5 (N Channel) A, 8.5 (P Channel) A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | HSOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 73 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3 (N Channel) V, 3 (P Channel) V |
| Minimum Gate Threshold Voltage | 1 (N Channel) V, 1 (P Channel) V |
| Maximum Power Dissipation | 7 W |
| Maximum Gate Source Voltage | ±20 (N Channel) V, ±20 (P Channel) V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Series | HP8M31 |
| Width | 5.8mm |
| Length | 5mm |
| Height | 1.1mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 12.3 nC @ 10 V (N Channel), 38 nC @ 10 V (P Channel) |