HP8S36TB Dual N-Channel MOSFET, 27 (N Channel) A, 80 (N Channel) A, 30 V HP8S36, 8-Pin HSOP ROHM [HP8S36TB]; 178-5715
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 (N Channel) A, 80 (N Channel) A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | HSOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 22 (N Channel) W, 29 (N Channel) W |
| Maximum Gate Source Voltage | ±128 (N Channel) V, ±20 (N Channel) V |
| Number of Elements per Chip | 2 |
| Width | 5.8mm |
| Minimum Operating Temperature | -55 °C |
| Length | 5mm |
| Height | 1.1mm |
| Typical Gate Charge @ Vgs | 4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel) |
| Series | HP8S36 |
| Maximum Operating Temperature | +150 °C |