QH8K51TR Dual N-Channel MOSFET, 2 A, 100 V QH8K51, 8-Pin TSMT ROHM [QH8K51TR]; 172-0481
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 355 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.5 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Height | 0.8mm |
| Series | QH8K51 |
| Maximum Operating Temperature | +150 °C |
| Length | 3.1mm |
| Forward Diode Voltage | 1.2V |
| Width | 2.5mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 4.7 nC @ 5 V |