QS8K21TR Dual N-Channel MOSFET, 4 A, 45 V QS8K21, 8-Pin TSMT ROHM [QS8K21TR]; 183-5461
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 45 V |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.5 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Forward Diode Voltage | 1.2V |
| Width | 2.5mm |
| Length | 3mm |
| Maximum Operating Temperature | 150 °C |
| Series | QS8K21 |
| Height | 0.8mm |
| Typical Gate Charge @ Vgs | 5.4 nC @ 10 V |