R6003KND3TL1 N-Channel MOSFET, 3 A, 600 V R6003KND3, 3-Pin DPAK ROHM [R6003KND3TL1]; 177-6032
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.125 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 44 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 6.4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 2.4mm |
| Series | R6003KND3 |
| Maximum Operating Temperature | +150 °C |
| Length | 6.8mm |
| Forward Diode Voltage | 1.5V |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V |