R6011END3TL1 N-Channel MOSFET, 11 A, 600 V R6011END3, 3-Pin DPAK ROHM [R6011END3TL1]; 177-6492
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 390 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 124 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.5V |
| Width | 6.4mm |
| Height | 2.4mm |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Length | 6.8mm |
| Series | R6011END3 |