R6012JNJGTL N-Channel MOSFET, 12 A, 600 V R6012JNJ, 3-Pin LPTS ROHM [R6012JNJGTL]; 183-5981
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | LPTS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 390 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 7V |
| Minimum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 160 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 9.2mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | 150 °C |
| Series | R6012JNJ |
| Height | 4.7mm |
| Typical Gate Charge @ Vgs | 28 nC @ 15 V |
| Length | 10.4mm |