RD3P08BBDTL N-Channel MOSFET, 80 A, 100 V RD3P08BBD, 3-Pin DPAK ROHM [RD3P08BBDTL]; 183-5354
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | DPAK |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 16 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 119 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Length | 6.8mm |
| Forward Diode Voltage | 1.2V |
| Width | 6.4mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Height | 2.3mm |
| Series | RD3P08BBD |
| Maximum Operating Temperature | 150 °C |