RD3S100CNTL1 N-Channel MOSFET, 10 A, 190 V RD3S100CN, 3-Pin DPAK ROHM [RD3S100CNTL1]; 177-6144
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.416666666666667 |
| Maximum Drain Source Voltage | 190 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 182 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 85 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 6.4mm |
| Minimum Operating Temperature | -55 °C |
| Length | 6.8mm |
| Forward Diode Voltage | 1.5V |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Height | 2.4mm |
| Maximum Operating Temperature | +150 °C |
| Series | RD3S100CN |