ROHM RGT30NS65DGC9 P-Channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK [RGT30NS65DGC9]; 171-5593
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 650 (Minimum) V |
| Maximum Gate Emitter Voltage | 30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 133 W |
| Package Type | TO-262 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Length | 10.1mm |
| Width | 4.5mm |
| Height | 9mm |
| Dimensions | 10.1 x 4.5 x 9mm |
| Gate Capacitance | 780pF |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |