RQ3E120ATTB P-Channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT ROHM [RQ3E120ATTB]; 133-3293
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 39 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | HSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 11.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 20 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 0.85mm |
| Width | 3.1mm |
| Series | RQ3E120AT |
| Typical Gate Charge @ Vgs | 62 nC @ 10 V |
| Length | 3.3mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |