RQ5H020SPTL P-Channel MOSFET, 2 A, 45 V RQ5H020SP, 3-Pin TSMT ROHM [RQ5H020SPTL]; 133-3302
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 45 V |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Width | 1.8mm |
| Length | 3mm |
| Height | 0.95mm |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V |
| Series | RQ5H020SP |