RQ6E030ATTCR Dual P-Channel MOSFET, 3 A, 30 V, 6-Pin TSMT ROHM [RQ6E030ATTCR]; 148-6932
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.125 |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 135 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.25 W |
| Maximum Gate Source Voltage | ±12 V |
| Number of Elements per Chip | 2 |
| Length | 3mm |
| Width | 1.8mm |
| Forward Diode Voltage | 1.2V |
| Height | 0.95mm |
| Typical Gate Charge @ Vgs | 5.4 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |