RQ6L020SPTCR P-Channel MOSFET, 2 A, 60 V RQ6L020SP, 6-Pin SOT-457T ROHM [RQ6L020SPTCR]; 183-5386
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-457T |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 266 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Length | 3mm |
| Forward Diode Voltage | 1.2V |
| Width | 1.8mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 7.2 nC @ 5 V |
| Height | 0.95mm |
| Series | RQ6L020SP |
| Maximum Operating Temperature | 150 °C |