RTU002P02T106 P-Channel MOSFET, 250 mA, 20 V, 3-Pin TSMT ROHM [RTU002P02T106]; 178-649
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 250 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 200 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Width | 1.6mm |
| Transistor Material | Si |
| Length | 2.9mm |
| Height | 0.85mm |