RU1C002UNTCL N-Channel MOSFET, 200 A, 20 V RU1C002UN, 3-Pin SC-85 ROHM [RU1C002UNTCL]; 177-6190
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SC-85 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.8 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 150 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Number of Elements per Chip | 1 |
| Height | 0.95mm |
| Length | 2.1mm |
| Minimum Operating Temperature | -55 °C |
| Series | RU1C002UN |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Width | 1.35mm |