RV2C010UNT2L N-Channel MOSFET, 1 A, 20 V RV2C010UN, 3-Pin DFN ROHM [RV2C010UNT2L]; 133-2850
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0416666666666667 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.05 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 400 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Width | 1.05mm |
| Height | 0.35mm |
| Series | RV2C010UN |
| Length | 0.65mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |