RYC002N05T316 N-Channel MOSFET, 200 mA, 50 V RYC002N05, 3-Pin SOT-23 ROHM [RYC002N05T316]; 133-2856
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage | 50 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.8V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 350 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Height | 1.15mm |
| Width | 1.5mm |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V |
| Series | RYC002N05 |
| Length | 3.1mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |