SCT2120AFC SiC N-Channel MOSFET, 29 A, 650 V SCT2120AF, 3-Pin TO-220AB ROHM [SCT2120AFC]; 124-6852
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 29 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 156 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.6V |
| Maximum Power Dissipation | 165 W |
| Maximum Gate Source Voltage | -6 V, +22 V |
| Number of Elements per Chip | 1 |
| Width | 8.63mm |
| Series | SCT2120AF |
| Height | 4.45mm |
| Maximum Operating Temperature | +175 °C |
| Length | 10.26mm |
| Forward Diode Voltage | 4.3V |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 61 nC @ 18 V |