SCT2160KEC SiC N-Channel MOSFET, 22 A, 1200 V SCT2160KE, 3-Pin TO-247 ROHM [SCT2160KEC]; 124-6853
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 226 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.6V |
| Maximum Power Dissipation | 165 W |
| Maximum Gate Source Voltage | -6 V, +22 V |
| Number of Elements per Chip | 1 |
| Width | 15.9mm |
| Transistor Material | SiC |
| Length | 20.95mm |
| Typical Gate Charge @ Vgs | 62 nC @ 18 V |
| Maximum Operating Temperature | +175 °C |
| Series | SCT2160KE |
| Height | 5.03mm |
| Forward Diode Voltage | 4.1V |