650V N-ch SiC Trench MOSFET in 4pin Pack [SCT3060ARC14]; 191-8781
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 39 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 78 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.6V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 165 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 22 V dc |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 58 nC @ 18V |