SH8M41GZETB Dual N/P-Channel MOSFET, ±2.6 (PChannel) A, ±3.4 (NChannel) A, 80 (NChannel) V, 80 (PChannel) V SH8M41GZE, [SH8M41GZETB]; 183-5521
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | ±2.6 (PChannel) A, ±3.4 (NChannel) A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | SOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 310 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Maximum Gate Source Voltage | ±20 (N-Channel) V, ±20 (P-Channel) V |
| Number of Elements per Chip | 2 |
| Width | 4.05mm |
| Minimum Operating Temperature | -55 °C |
| Length | 5.2mm |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 6.6 nC @ 5 V |
| Height | 1.6mm |
| Maximum Operating Temperature | 150 °C |
| Series | SH8M41GZE |