UT6K30TCR Dual N-Channel MOSFET, 3 A, 60 V UT6K30, 8-Pin DFN2020, HUML2020L ROHM [UT6K30TCR]; 171-9912
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.125 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN2020, HUML2020L |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 223 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.7V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 2 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Series | UT6K30 |
| Height | 0.6mm |
| Typical Gate Charge @ Vgs | P Channel), 2.1 nC @ 10 V (N Channel |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Width | 2.1mm |
| Length | 2.1mm |
| Forward Diode Voltage | 1.2V |