Semikron SEMiX603GB12E4p, SEMiX®3p Series IGBT Transistor Module, 1.1 kA max, 1200 V, Through Hole [SEMiX603GB12E4p]; 122-0393
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Configuration | Series |
| Transistor Configuration | Series |
| Maximum Continuous Collector Current | 1.1 kA |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | 20V |
| Channel Type | N |
| Mounting Type | Through Hole |
| Package Type | SEMiX®3p |
| Pin Count | 11 |
| Dimensions | 150 x 62.4 x 17mm |
| Height | 17mm |
| Length | 150mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Width | 62.4mm |