STMicroelectronics Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W [SCT10N120]
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The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. Very fast and robust intrinsic body diode Low capacitance
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance