SCTH35N65G2V-7, SiC MOSFET 650V 45A 55 [SCTH35N65G2V-7]; 201-0890
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | H²PAK-7 |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 0.055 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Number of Elements per Chip | 1 |
| Series | SCTH35 |
| Transistor Material | SiC |