SCTW90N65G2V, Sic MOSFET 650V 119A 18 [SCTW90N65G2V]; 201-0887
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 119 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | HiP247 |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.024 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Number of Elements per Chip | 1 |
| Series | SCTW90 |
| Transistor Material | SiC |