STMicroelectronics, STB11NM80T4 [STB11NM80T4]; 188-8280
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 800 V |
| Package Type | D2PAK |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 400 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 9.35mm |
| Height | 4.37mm |
| Minimum Operating Temperature | -65 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 10.4mm |
| Typical Gate Charge @ Vgs | 43.6 nC @ 10 V |
| Forward Diode Voltage | 0.86V |