STB13N60M2 N-Channel MOSFET, 11 A, 650 V MDmesh M2, 3-Pin D2PAK STMicroelectronics [STB13N60M2]; 165-6548
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Series | MDmesh M2 |
| Height | 4.6mm |
| Minimum Operating Temperature | -55 °C |
| Width | 9.35mm |
| Transistor Material | Si |
| Length | 10.4mm |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |