STB25N80K5 N-Channel MOSFET, 19.5 A, 800 V MDmesh K5, SuperMESH5, 3-Pin D2PAK STMicroelectronics [STB25N80K5]; 103-2010
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19.5 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 260 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 250 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | MDmesh K5, SuperMESH5 |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Width | 8.95mm |
| Maximum Operating Temperature | +150 °C |
| Length | 10mm |
| Height | 4.4mm |
| Transistor Material | Si |