STB26NM60N N-Channel MOSFET, 20 A, 600 V MDmesh, 3-Pin D2PAK STMicroelectronics [STB26NM60N]; 760-9503
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 165 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 10.75mm |
| Width | 10.4mm |
| Maximum Operating Temperature | +150 °C |
| Height | 4.6mm |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Series | MDmesh |